Tampere University (TAU) is responsible for the Cryogenic Memory and In-Memory Computing task in the project based on complementary metal oxide semiconductor (CMOS)-compatible ferroelectric memory technology. Development of cryogenic memory components will be done in collaboration with Industrial partners like Intel, Picosun – Applied Materials, and Okmetic, RTOs like Fraunhofer IPMS and VTT and academic partner like Lund University.

Tampere University will take care of the development of scalable cryogenic memory technology that can be directly integrated with standard CMOS electronics, able to operate within a broad temperature range and with ultra-low power consumption. First, developments will focus on the ferroelectric capacitor stacks optimized for low power and fast cryogenic operations and eventually they will be integrated in ferroelectric field-effect transistor (FeFET) gate stacks and will be benchmarked against standard memory technologies operating at liquid nitrogen (77K) and liquid helium (4K) temperatures. This development would bring computing and artificial intelligence (AI) closer to the quantum world. Initial results from TAU team on this task are available here.

More information on https://www.tuni.fi/en/sayani-majumdar.