Towards Improved Polarization Uniformity in Ferroelectric HfZrO Devices within Back End of Line Thermal Budget for Memory and Neuromorphic Applications

• Authors:
• Padma Srivari, Ella Paasio, Xinye Li, Sayani Majumdar (TAU)

• Journal:
• Applied Physics

• Publication date:
• 15.12.2024

• DOI:
• 10.48550/arXiv.2412.11288

Understanding fatigue and recovery mechanisms in Hf0.5Zr0.5O2 capacitors for designing high endurance ferroelectric memory and neuromorphic hardware

• Authors:
• Xinye Li, Padma Srivari, Ella Paasioa and Sayani Majumdar (TAU)

• Journal:
• Nanoscale

• Publisher:
• RSC

• Publication date:
• 24.01.2025

• DOI:
• 10.1039/D4NR04861J

Can ferroelectric tunnel junction be a game changer as eNVM and in neuromorphic hardware?

• Authors:
• Sayani Majumdar (TAU)

• Journal:
• APL Machine Learning

• Publisher:
• AIP

• Publication date:
• 17.04.2025

• DOI:
• 10.1063/5.0252822

Universal Model for Ferroelectric Capacitors Operating Down to Deep Cryogenic Temperatures

• Authors:
• Ella Paasio, Rikhard Ranta, Sayani Majumdar (TAU)

• Journal:
• Advanced Electronic Materials

• Publication date:
• 11.09.2024

• DOI:
• 10.48550/arXiv.2410.09131

An Experimentally Validated TCAD Variability Study of the Relative Performance of In-Ga-Zn-O and Poly-Si-Channel Ferroelectric VNANDs

• Authors:
• M. Thesberg; Z. Stanojević; F. Schanovsky; J.M. Gonzalez-Medina; G. Rzepa; F. Mitterbauer (GTS)

• Journal:
• 2024 IEEE International Electron Devices Meeting (IEDM)

• Publisher:
• IEEE

• Publication date:
• Dec. 2024

• DOI:
• 10.1109/IEDM50854.2024.10873461

A Physical TCAD Mobility Model of Amorphous In-Ga-Zn-O (a-IGZO) Devices with Spatially Varying Mobility Edges, Band-Tails, and Enhanced Low-Temperature Convergence

• Authors:
• GTS (Mischa Thesberg, Franz Schanovsky, , Markus Karner, Jose Maria Gonzalez-Medina, Zlatan Stanojević and Gerhard Rzepa) and IMEC (Ying Zhao and Adrian Chasin)

• Journal:
• Micromachines

• Publisher:
• MDPI

• Publication date:
• 27.06.2024

• DOI:
• 10.3390/mi15070829