Lund University will contribute with optimization of III-V epitaxial growth and Nanowire processing technology, including integration of III-V materials on Si substrates, required to mature technology and to reach higher TRLs. Our efforts within ARCTIC will build on available and reported high-performance transistor process flows. We will in ARCTIC address technology scalability, process uniformity, yield and PDK-development. Cryogenic characterization of transistor RF-performance will be an central task. The overall goal is to bring the technology to higher TRLs and to further introduce process control to monitor the critical process steps.

Lund University will further develop and characterize cryogenic memory elements to be used for quantum cryogenic control electronics. The particular effort will material and device characterization for devices integrated on a III-V platform.

The effort will build on collaboration with national and international partners.